DBC (Direct Bond Copper)
Total : 0
Application of Manufacturing Technology
- DBC (Direct Bond Copper)
- AMB
Application Market
- IGBT / SiC / GaN / Power Module
Description
Direct Bond Copper (DBC) technology utilizes the introduction of trace amounts of oxygen O to form a eutectic liquid phase on the surface of copper Cu at temperatures ranging from 1065 ℃ to 1083 ℃. This liquid phase can directly form eutectic bonding with ceramic Al2O3.
Copper thickness is generally 0.3 mm, suitable for high-power modules above 400V/100A.
| Items | Desdription | ||||||
| Ceramic | Material | 96%Al2O3、AlN(under developing) | |||||
| Thickness | 0.38 mm、0.50 mm、0.63 mm | ||||||
| Copper | Material | OFHC 、Purity > 99.9% | |||||
| Thickness | 0.127 mm | 0.20 mm | 0.25 mm | 0.30 mm | 0.40 mm | 0.50 mm | |
| Line width | 0.30 mm | 0.35 mm | 0.40 mm | 0.45 mm | 0.55 mm | 0.65 mm | |
| Space width | 0.30 mm | 0.35 mm | 0.40 mm | 0.45 mm | 0.55 mm | 0.65 mm | |
| Etching Factor (A)/Tolerance(T) | A > 2.0；T = ± 0.20 mm @ Cu thickness 0.3mm | ||||||
| Copper Peeling Strength | Al2>O3 > 60N/cm @ Cu thickness 0.3mm | ||||||
| Surface Finish | Bare Copper、Anti-Oxidation、ENIG | ||||||
| Items | Desdription | ||||||
| Ceramic | Material | 96%Al2O3、AlN(under developing) | |||||
| Thickness | 0.38 mm、0.50 mm、0.63 mm | ||||||
| Copper | Material | OFHC 、Purity > 99.9% | |||||
| Thickness | 0.127 mm | 0.20 mm | 0.25 mm | 0.30 mm | 0.40 mm | 0.50 mm | |
| Line width | 0.30 mm | 0.35 mm | 0.40 mm | 0.45 mm | 0.55 mm | 0.65 mm | |
| Space width | 0.30 mm | 0.35 mm | 0.40 mm | 0.45 mm | 0.55 mm | 0.65 mm | |
| Etching Factor (A)/Tolerance(T) | A > 2.0；T = ± 0.20 mm @ Cu thickness 0.3mm | ||||||
| Copper Peeling Strength | Al2>O3 > 60N/cm @ Cu thickness 0.3mm | ||||||
| Surface Finish | Bare Copper、Anti-Oxidation、ENIG | ||||||
