覆銅陶瓷基板
總計 : 0
應用製程技術
- DBC (Direct Bond Copper)
- AMB
應用市場
- IGBT / SiC / GaN / Power Module
說明
直接覆銅接合（Direct Bond Copper, DBC）技術，係利用引入微量的氧O在銅Cu表面於1065℃~1083℃溫度產生共晶（Eutectic）液相，此液相可直接與陶瓷Al2O3形成共晶結合。
銅厚度一般為0.3 mm，適用於400V/100A以上高功率模組。
| Items | Desdription | ||||||
| Ceramic | Material | 96%Al2O3、AlN(under developing) | |||||
| Thickness | 0.38 mm、0.50 mm、0.63 mm | ||||||
| Copper | Material | OFHC 、Purity > 99.9% | |||||
| Thickness | 0.127 mm | 0.20 mm | 0.25 mm | 0.30 mm | 0.40 mm | 0.50 mm | |
| Line width | 0.30 mm | 0.35 mm | 0.40 mm | 0.45 mm | 0.55 mm | 0.65 mm | |
| Space width | 0.30 mm | 0.35 mm | 0.40 mm | 0.45 mm | 0.55 mm | 0.65 mm | |
| Etching Factor (A)/Tolerance(T) | A > 2.0；T = ± 0.20 mm @ Cu thickness 0.3mm | ||||||
| Copper Peeling Strength | Al2>O3 > 60N/cm @ Cu thickness 0.3mm | ||||||
| Surface Finish | Bare Copper、Anti-Oxidation、ENIG | ||||||
| Items | Desdription | ||||||
| Ceramic | Material | 96%Al2O3、AlN(under developing) | |||||
| Thickness | 0.38 mm、0.50 mm、0.63 mm | ||||||
| Copper | Material | OFHC 、Purity > 99.9% | |||||
| Thickness | 0.127 mm | 0.20 mm | 0.25 mm | 0.30 mm | 0.40 mm | 0.50 mm | |
| Line width | 0.30 mm | 0.35 mm | 0.40 mm | 0.45 mm | 0.55 mm | 0.65 mm | |
| Space width | 0.30 mm | 0.35 mm | 0.40 mm | 0.45 mm | 0.55 mm | 0.65 mm | |
| Etching Factor (A)/Tolerance(T) | A > 2.0；T = ± 0.20 mm @ Cu thickness 0.3mm | ||||||
| Copper Peeling Strength | Al2>O3 > 60N/cm @ Cu thickness 0.3mm | ||||||
| Surface Finish | Bare Copper、Anti-Oxidation、ENIG | ||||||
